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title:(Contact AND metallurgy AND optimization AND for AND ohmic AND contacts AND to AND InP)

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1 Conference paper

Contact metallurgy optimization for ohmic contacts to InP

Clausen, Thomas; Pedersen, Arne Skyggebjerg; Leistiko, Otto

21st European Solid State Device Research Conference — 1991, pp. 157-160

AuGeNi and AuZnNi metallizations to n- and p-InP were studied as a function of the annealing temperature in a Rapid Thermal Annealing (RTA) system. For n-InP (S:8×1018cm-3) a broad minimum existed from 385°C to 500°C, in which the specific contact resistance, rc, was about 10-7 ¿cm2. The lowest

Year: 1991

Language: English

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2 Journal article

Contact metallurgy optimization for ohmic contacts to InP

AuGeNi and AuZnNi metallizations to n- and p-InP were studied as a function of the annealing temperature in a Rapid Thermal Annealing (RTA) system. For n-InP (S:8×1018 cm-3) a broad minimum existed from 385 °C to 500 °C, in which the specific contact resistance, rc, was about 10-7 Ωcm2. The lowest

Year: 1991

Language: English

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