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Conference paper

Module Integrated GaN Power Stage for High Switching Frequency Operation

From

Department of Electrical Engineering, Technical University of Denmark1

Electronics, Department of Electrical Engineering, Technical University of Denmark2

An increased attention has been detected todevelop smaller and lighter high voltage power converters in therange of 50 V to 400 V domains. The applications for theseconverters are mainly focused for Power over Ethernet (PoE),LED lighting and ac adapters. Design for high power density isone of the targets for next generation power converters.

Thispaper presents an 80 V input capable multi-chip moduleintegration of enhancement mode gallium nitride (GaN) fieldeffect transistors (FETs) based power stage. The module design ispresented and validated through experimental results. The powerstage is integrated on a high glass transition temperature 0.4 mmthick FR4 substrate configured as a 70 pin ball grid arraypackage.

The power stage is tested up to switching frequency of12 MHz. The power stage achieved 88.5 % peak efficiency whenconfigured as a soft switching buck converter operating at 7MHz. The converter is tested up to 12 W of output power at 13 VĀ± 1.5 V output voltage. The converter achieved a volume powerdensity of 20 W/cm3 and area power density of 9.4 W/cm2.

Language: English
Publisher: IEEE
Year: 2017
Pages: 848-852
Proceedings: 12th IEEE International Conference on Power Electronics and Drive Systems (PEDS 2017)
ISBN: 1509023631 , 150902364X , 150902364x , 1509023658 , 9781509023639 , 9781509023646 and 9781509023653
ISSN: 21645264 and 21645256
Types: Conference paper
DOI: 10.1109/PEDS.2017.8289242
ORCIDs: Nour, Yasser and Knott, Arnold

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