Journal article
Density-dependent electron scattering in photoexcited GaAs in strongly diffusive regime
In a series of systematic optical pump–terahertz probe experiments, we study the density-dependent electron scattering rate in photoexcited GaAs in the regime of strong carrier diffusion. The terahertz frequency-resolved transient sheet conductivity spectra are perfectly described by the Drude model, directly yielding the electron scattering rates.
A diffusion model is applied to determine the spatial extent of the photoexcited electron-hole gas at each moment after photoexcitation, yielding the time-dependent electron density, and hence the density-dependent electron scattering time. We find that the electron scattering time decreases from 320 to 60 fs, as the electron density changes from 1015 to 1019 cm−3.
Language: | English |
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Publisher: | American Institute of Physics |
Year: | 2013 |
Pages: | 231120 |
ISSN: | 10773118 and 00036951 |
Types: | Journal article |
DOI: | 10.1063/1.4810756 |