Conference paper
Loss Analysis of GaN Based Partial Parallel Isolated Bidirectional Full Bridge Boost Converter
A theoretical loss analysis is presented for GaN switches, for which conduction and switching losses are considered, and for planar transformers, where winding and core losses are considered. The analysis is then used to make a comparison of the losses in the partial parallel isolated full bridge boost converter and the isolated full bridge boost converter.
| Language: | English |
|---|---|
| Publisher: | IEEE |
| Year: | 2018 |
| Pages: | 1-4 |
| Proceedings: | 2018 IEEE International Conference on Intelligent Green Building and Smart Grid |
| ISBN: | 1538606607 , 1538606615 , 1538606623 , 9781538606605 , 9781538606612 and 9781538606629 |
| Types: | Conference paper |
| DOI: | 10.1109/IGBSG.2018.8393535 |
| ORCIDs: | Jørgensen, Kasper Lüthje , Mira Albert, Maria del Carmen , Zhang, Zhe and Andersen, Michael A. E. |
Bridge circuits Core loss DC-DC power convertors GaN GaN switches III-V semiconductors Logic gates Switching loss Topology Transformer cores Windings bidirectional bidirectional full bridge boost converter core losses full bridge boost gallium compounds partial parallel partial parallel isolated full bridge boost converter planar transformers power convertors power transformers switching losses theoretical loss analysis transformer windings wide band gap semiconductors winding losses
