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Conference paper

Tunable high-power narrow-linewidth semiconductor laser based on an external-cavity tapered amplifier at 670 nm

In Conference on Lasers & Electro Optics & the Pacific Rim Conference on Lasers and Electro-optics — 2009, pp. 1-2

By Chi, Mingjun1,2; Jensen, Ole Bjarlin1,2; Erbert, G.3; Sumpf, B.3; Petersen, Paul Michael1,2

From

Diode Lasers and LED Systems, Department of Photonics Engineering, Technical University of Denmark1

Department of Photonics Engineering, Technical University of Denmark2

Ferdinand-Braun-Institut3

A narrow-linewidth laser system based on a tapered semiconductor optical amplifier in external cavity is demonstrated. 800 mW output power is obtained, and the laser system is tunable from 655 to 679 nm.

Language: English
Publisher: IEEE
Year: 2009
Pages: 1-2
Proceedings: 8th Pacific Rim Conference on Lasers and Electro-Optics 2009<br/>
Journal subtitle: Cleo/pacific Rim '09
ISBN: 1424438292 , 1424438306 , 9781424438297 , 9781424438303 , 1509068171 and 9781509068173
Types: Conference paper
DOI: 10.1109/CLEOPR.2009.5292354
ORCIDs: Chi, Mingjun , Jensen, Ole Bjarlin and Petersen, Paul Michael
Keywords

Diffraction Diode lasers High power amplifiers Laser beams Lenses Power generation Power lasers Semiconductor lasers Semiconductor optical amplifiers Semiconductor tapered amplifier Tunable circuits and devices external-cavity external-cavity tapered amplifier laser beams laser cavity resonators laser power laser tuning narrow-linewidth semiconductor laser power 800 mW semiconductor optical amplifier semiconductor optical amplifiers tunable high-power laser wavelength 655 nm to 679 nm

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