Journal article
Bright Quantum Dot Single-Photon Emitters at Telecom Bands Heterogeneously Integrated on Si
Wrocław University of Science and Technology1
Quantum Light Sources, Department of Electrical and Photonics Engineering, Technical University of Denmark2
Department of Physics, Technical University of Denmark3
Quantum Physics and Information Technology, Department of Physics, Technical University of Denmark4
Center for Macroscopic Quantum States, Department of Physics, Technical University of Denmark5
University of Science and Technology of China6
Nanophotonic Devices, Department of Electrical and Photonics Engineering, Technical University of Denmark7
NanoPhoton – Center for Nanophotonics, Centers, Technical University of Denmark8
Centre of Excellence for Silicon Photonics for Optical Communications, Centers, Technical University of Denmark9
Department of Electrical and Photonics Engineering, Technical University of Denmark10
...and 0 moreWhereas the Si photonic platform is highly attractive for scalable optical quantum information processing, it lacks practical solutions for efficient photon generation. Self-assembled semiconductor quantum dots (QDs) efficiently emit photons in the telecom bands (1460-1625 nm) and allow for heterogeneous integration with Si.
In this work, we report on a novel, robust, and industry-compatible approach for achieving single-photon emission from InAs/InP QDs heterogeneously integrated with a Si substrate. As a proof of concept, we demonstrate a simple vertical emitting device, employing a metallic mirror beneath the QD emitter, and experimentally obtained photon extraction efficiencies of 10%.
Nevertheless, the figures of merit of our structures are comparable with values previously only achieved for QDs emitting at shorter wavelength or by applying technically demanding fabrication processes. Our architecture and the simple fabrication procedure allows for the demonstration of high-purity single-photon generation with a second-order correlation function at zero time delay, g(2)(τ = 0) < 0.02, without any corrections at continuous wave excitation at the liquid helium temperature and preserved up to 50 K.
For pulsed excitation, we achieve the as-measured g(2)(0) down to 0.205 ± 0.020 (0.114 ± 0.020 with background coincidences subtracted).
Language: | English |
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Publisher: | American Chemical Society |
Year: | 2022 |
Pages: | 2273-2279 |
ISSN: | 23304022 |
Types: | Journal article |
DOI: | 10.1021/acsphotonics.2c00027 |
ORCIDs: | 0000-0002-2154-896X , Sakanas, Aurimas , 0000-0001-9931-7523 , Huck, Alexander , 0000-0003-1325-3261 , 0000-0001-9602-8929 , Yvind, Kresten , Gregersen, Niels , 0000-0002-5260-7360 , Semenova, Elizaveta and Gur, Ugur M. |