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Conference paper

Individual optimization of InAlGaAsP-InP sections for 1.55-μm passively mode-locked lasers

By Kulkova, Irina1,2; Larsson, David1,3; Semenova, Elizaveta1,2; Yvind, Kresten1,2

From

Department of Photonics Engineering, Technical University of Denmark1

Nanophotonic Devices, Department of Photonics Engineering, Technical University of Denmark2

Nanophotonics, Department of Photonics Engineering, Technical University of Denmark3

We present integrated single QW semiconductor optical amplifier and MQW electroabsorber modulator based on InAlGaAsP-InP materials for application in a monolithic mode-locked laser. Optimized structures with high-quality butt-joint interfaces are demonstrated.

Language: English
Publisher: IEEE
Year: 2012
Pages: 133-134
Proceedings: 23rd IEEE International Semiconductor Laser Conference (ISLC 2012)
Series: I E E E International Semiconductor Laser Conference. Conference Digest
ISBN: 1457708272 , 1457708280 , 1457708299 , 9781457708275 , 9781457708282 and 9781457708299
ISSN: 19476981 and 08999406
Types: Conference paper
DOI: 10.1109/ISLC.2012.6348364
ORCIDs: Semenova, Elizaveta and Yvind, Kresten
Keywords

Mode-locked lasers Selective area growth Semiconductor lasers

Other keywords

III-V semiconductors InAlGaAsP-InP Indium phosphide Laser mode locking MQW electroabsorber modulator Masers Quantum well devices Semiconductor optical amplifiers aluminium compounds gallium arsenide high-quality butt-joint interfaces indium compounds laser mode locking monolithic passively-mode-locked lasers optical design method optical design techniques optical fabrication optical modulation quantum well lasers quantum well semiconductor optical amplifier selective area growth semiconductor lasers semiconductor optical amplifiers semiconductor quantum wells wavelength 1.55 mum

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