Journal article
Tough, semiconducting polyethylene-poly(3-hexylthiophene) diblock copolymers
Swiss Federal Institute of Technology Zurich1
University of Cambridge2
Risø National Laboratory for Sustainable Energy, Technical University of Denmark3
Polymers for Energy Technology, Polymer Department, Risø National Laboratory for Sustainable Energy, Technical University of Denmark4
Polymer Department, Risø National Laboratory for Sustainable Energy, Technical University of Denmark5
Eindhoven University of Technology6
Polymers for Biological and Medical Technology, Polymer Department, Risø National Laboratory for Sustainable Energy, Technical University of Denmark7
Semiconducting diblock copolymers of polyethylene (PE) and regioregular poly(3-hexylthiophene) (P3HT) are demonstrated to exhibit a rich phase behaviour, judicious use of which permitted us to fabricate field-effect transistors that show saturated charge carrier mobilities, mu(FET), as high as 2 x 10(-2) cm(2)V(-1)s(-1) and ON-OFF ratios, I-on/I-off similar to 10(5) at contents of the insulating PE moiety as high as 90 wt %.
In addition, the diblock copolymers display outstanding flexibility and toughness with elongations at break exceeding 600 % and true tensile strengths around 70 MPa, opening the path towards robust and truly flexible electronic components.
| Language: | English |
|---|---|
| Publisher: | WILEY-VCH Verlag |
| Year: | 2007 |
| Pages: | 2674-2679 |
| ISSN: | 16163028 and 1616301x |
| Types: | Journal article |
| DOI: | 10.1002/adfm.200601248 |
| ORCIDs: | Andreasen, Jens Wenzel and Nielsen, Martin Meedom |
