Journal article
High-Performance Single Nanowire Tunnel Diodes
In
Nano Letters
—
2010, Volume 10, Issue 3, pp. 974-979
Abstract
We demonstrate single nanowire tunnel diodes with room temperature peak current densities of up to 329 A/cm2. Despite the large surface to volume ratio of the type-II InP-GaAs axial heterostructure nanowires, we measure peak to valley current ratios (PVCR) of up to 8.2 at room temperature and 27.6 at liquid helium temperature.
These sub-100-nm-diameter structures are promising components for solar cells as well as electronic applications.
| Language: | English |
|---|---|
| Publisher: | American Chemical Society |
| Year: | 2010 |
| Pages: | 974-979 |
| ISSN: | 15306992 and 15306984 |
| Types: | Journal article |
| DOI: | 10.1021/nl903941b |
