Journal article · Preprint article
Engineering hybrid epitaxial InAsSb/Al nanowires for stronger topological protection
The combination of strong spin-orbit coupling, large g factors, and the coupling to a superconductor can be used to create a topologically protected state in a semiconductor nanowire. Here we report on growth and characterization of hybrid epitaxial InAsSb/Al nanowires, with varying composition and crystal structure.
We find the strongest spin-orbit interaction at intermediate compositions in zinc-blende InAs1-xSbx nanowires, exceeding that of both InAs and InSb materials, confirming recent theoretical studies. We show that the epitaxial InAsSb/Al interface allows for a hard induced superconducting gap and 2e transport in Coulomb charging experiments, similarly to experiments on InAs/Al and InSb/Al materials, and find measurements consistent with topological phase transitions at low magnetic fields due to large effective g factors.
Finally we present a method to grow pure wurtzite InAsSb nanowires which are predicted to exhibit even stronger spin-orbit coupling than the zinc-blende structure.
Language: | English |
---|---|
Year: | 2018 |
Pages: | 10 |
ISSN: | 24760455 and 24759953 |
Types: | Journal article and Preprint article |
DOI: | 10.1103/PhysRevMaterials.2.044202 |
ORCIDs: | 0000-0002-1623-3373 , 0000-0002-1533-2783 , 0000-0003-2809-6158 , 0000-0002-4639-5314 , 0000-0002-7879-976X , 0000-0003-2420-4692 , 0000-0002-1930-8553 and Gejl, Aske Nørskov |