Journal article
Structure determination of the indium induced Si(001)-(4X3) reconstruction by surface x-ray diffraction and scanning tunneling microscopy
In
Applied Surface Science
—
1998, Volume 123/124, pp. 104-110
Abstract
The indium-induced Si(001)-(4 X 3) reconstruction has been investigated by surface X-ray diffraction (SXRD) measurements with synchrotron radiation and scanning tunneling microscopy (STM). The Patterson function analysis enables us to exclude In dimers as a structural element in this reconstruction.
We present a new structural model which includes 6 In atoms threefold coordinated to Si atoms and 5 displaced Si atoms per unit cell. Relaxations down to the sixth layer were determined. 'Trimers' made up of In-Si-In atoms are a key structural element. (C) 1998 Elsevier Science B.V.
| Language: | English |
|---|---|
| Year: | 1998 |
| Pages: | 104-110 |
| ISSN: | 18735584 and 01694332 |
| Types: | Journal article |
| DOI: | 10.1016/S0169-4332(97)00472-8 |
Keywords
