Conference paper
Detection of Potential Induced Degradation in c-Si PV Panels Using Electrical Impedance Spectroscopy
This work, for the first time, investigates an Impedance Spectroscopy (IS) based method for detecting potential-induced degradation (PID) in crystalline silicon photovoltaic (c-Si PV) panels. The method has been experimentally tested on a set of panels that were confirmed to be affected by PID by using traditional current-voltage (I-V) characterization methods, as well as electroluminescence (EL) imaging.
The results confirm the effectiveness of the new approach to detect PID in PV panels.
Language: | English |
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Publisher: | IEEE |
Year: | 2016 |
Pages: | 1575-1579 |
Proceedings: | 42nd IEEE Photovoltaic Specialists Conference |
ISBN: | 1509027246 , 1509027254 , 9781509027248 and 9781509027255 |
Types: | Conference paper |
DOI: | 10.1109/PVSC.2016.7749885 |
ORCIDs: | Poulsen, Peter Behrensdorff and 0000-0002-8942-3784 |
AC modelling Current-voltage characterization Electroluminescence imaging Impedance spectroscopy Parameter fitting Potential induced degradation SDG 7 - Affordable and Clean Energy c-Si PV panel
Capacitance Degradation Impedance PID identification Photovoltaic cells Photovoltaic systems Resistance Spectroscopy chemical research area crystalline silicon PV panels crystallisation current-voltage characterization methods electrical impedance spectroscopy electrical research area electrochemical impedance spectroscopy electroluminescence imaging elemental semiconductors potential induced degradation detection silicon solar cell arrays