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title:(High-field AND EPR AND spectroscopy AND of AND thermal AND donors AND in AND silicon)

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1 Conference paper ยท Journal article

High-field EPR spectroscopy of thermal donors in silicon

Thermal donors generated in p-type boron-doped Czochralski-grown silicon by a 450 degrees C heat treatment have been studied by high-field magnetic resonance spectroscopy. In the experiments conducted at a microwave frequency of 140 GHz and in a magnetic field of approximately 5 T four individual

Year: 1997

Language: English

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2 Conference paper

High-field EPR spectroscopy of thermal donors in silicon

Year: 1997

Language: English

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