Journal article
Formation of tilted clusters in the electrochemical deposition of copper on n-gas(001)
Using in-situ synchrotron X-ray diffraction, we have studied the epitaxial properties of Cu clusters electrochemically deposited on n-GaAs(001) substrates. The Cu clusters have (001) base planes and their [100] directions are aligned with the [110] directions of the GaAs(001) surface unit cell, but with a large angular spread of 4.5 degrees.
Moreover, the Cu(001) planes are tilted with respect to the GaAs(001) substrate. The tilt of about 6 degrees did not show a preference for any substrate azimuth, giving rise to a ring-shaped (111)(Cu) reflection. This epitaxial tilt seems to be a novel mechanism of strain relief in an epitaxial system with a large mismatch of lattice constants and a large surface roughness.
Language: | English |
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Year: | 1996 |
Pages: | 40-44 |
ISSN: | 18792758 and 00396028 |
Types: | Journal article |
DOI: | 10.1016/S0039-6028(96)00847-3 |