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Journal article

The properties and structure relationship of half metallic magnetic materials on GaAs

From

Ultra-fast Optical Communication, Department of Photonics Engineering, Technical University of Denmark1

Department of Photonics Engineering, Technical University of Denmark2

Department of Chemistry, Technical University of Denmark3

Silicon Microtechnology Group, MicroElectroMechanical Systems Section, Department of Micro- and Nanotechnology, Technical University of Denmark4

MicroElectroMechanical Systems Section, Department of Micro- and Nanotechnology, Technical University of Denmark5

Department of Micro- and Nanotechnology, Technical University of Denmark6

Quantum Physics and Information Technology, Department of Physics, Technical University of Denmark7

Department of Physics, Technical University of Denmark8

We report the magnetic and transport properties of two promising half metallic/GaAs hybrid spintronic structures with respect to their structural features. The Co2 MnGa/GaAs(100) has shown a very low magnetic moment which is attributed to the columnar structure and the interface amorphous layer as from the HRTEM images.

The out of plane hysteresis loops have shown a double switching which is related to the interface layer with different magnetic properties. In the Fe3O4/GaAs(100) system, the fast saturation of the magnetization indicates the low antiphase boundaries, which is supported by the HRTEM image.

Furthermore, the moderate barrier height and the heavily damped processional response to the applied field pulses may be related to the interface structure.

Language: English
Publisher: IEEE
Year: 2009
Pages: 4360-4363
ISSN: 19410069 and 00189464
Types: Journal article
DOI: 10.1109/TMAG.2009.2024768
ORCIDs: Damsgaard, Christian Danvad and Hansen, Jørn Bindslev

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