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Journal article

Element specific investigation of ultrathin Co2MnGa/GaAs heterostructures

From

Magnetic Systems Group, LabChip Section, Department of Micro- and Nanotechnology, Technical University of Denmark1

LabChip Section, Department of Micro- and Nanotechnology, Technical University of Denmark2

Department of Micro- and Nanotechnology, Technical University of Denmark3

Quantum Physics and Information Technology, Department of Physics, Technical University of Denmark4

Department of Physics, Technical University of Denmark5

We have used x-ray magnetic circular dichroism to study the element specific magnetic properties of ultrathin films of the Heusler alloy Co2MnGa at room temperature. Nine films were grown by molecular beam epitaxy on GaAs substrates and engineered to vary in stoichiometry as Co1.86Mn0.99Ga1, Co1.95Mn0.98Ga1, and Co1.97Mn0.96Ga1, with thicknesses of 5.3, 7.6, and 9.7 nm, and were capped with Al to prevent oxidization.

Sum rule analysis revealed magnetic moments significantly lower than the values predicted theoretically, especially in the case of the Mn total magnetic moment. The results do not support the hypothesis that a large magnetic moment is transferred from Co to Mn, and may suggest that diffusion and reacted layers at ultrathin thicknesses can effect the establishment of a full Heusler structure.

Language: English
Publisher: American Institute of Physics
Year: 2007
Pages: 09J506
Proceedings: 10th JOINT MMM/INTERMAG CONFERENCE
ISSN: 10897550 and 00218979
Types: Journal article
DOI: 10.1063/1.2712165
ORCIDs: Damsgaard, Christian Danvad and Hansen, Jørn Bindslev

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