Conference paper
Schottky barrier enhancement on n-InP solar cell applications
It is demonstrated that the Schottky barrier height on n-type InP can be enhanced to values close to the energy bandgap (1.35 eV) by employing a AuZnCr metallization. The process is simple and requires only mild and fast annealing sequences with temperatures not exceeding 500°C. Also, no critical epitaxial growth step of junctions is needed, making the process fairly cheap.
Thus, prospects for an efficient and simple solar cell device structure for space application purposes based on highly radiant-resistant InP are greatly improved
| Language: | English |
|---|---|
| Publisher: | IEEE |
| Year: | 1994 |
| Pages: | 1807-1810 |
| Proceedings: | 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion |
| ISBN: | 0780314603 and 9780780314603 |
| Types: | Conference paper |
| DOI: | 10.1109/WCPEC.1994.520654 |
1.35 eV Annealing AuZnCr Contacts III-V semiconductors InP Indium phosphide Metallization Photonic band gap Photovoltaic cells Schottky barrier enhancement Schottky barriers Schottky diodes Temperature Voltage annealing annealing sequences application energy bandgap epitaxial growth indium compounds metallization n-InP solar cell semiconductor device metallisation semiconductor device testing solar cells
