Conference paper
Lifetime of ALD Al2O3 Passivated Black Silicon Nanostructured for Photovoltaic Applications
Department of Energy Conversion and Storage, Technical University of Denmark1
Department of Micro- and Nanotechnology, Technical University of Denmark2
Silicon Microtechnology, Department of Micro- and Nanotechnology, Technical University of Denmark3
Nanoprobes, Department of Micro- and Nanotechnology, Technical University of Denmark4
Department of Photonics Engineering, Technical University of Denmark5
Metamaterials, Department of Photonics Engineering, Technical University of Denmark6
Surface Physics and Catalysis, Department of Physics, Technical University of Denmark7
Black silicon nano-structures provide significant reduction of silicon surface reflection due to highly corrugated nano-structures with excellent light trapping properties. However, most recent RIE techniques for black silicon nano-structuring have one very important limitation for PV applications – high surface recombination velocity due to intensive plasma ion bombardment of the silicon surface.
In an attempt to optimize black silicon for PV applications we develop a mask-less one step reactive ion nano-structuring of silicon with low ion surface damage with reflectance below 0.5%. For passivation purposes we used 37 nm ALD Al2O3 films and conducted lifetime measurements and found 1220 µs and to 4170 µs, respectively, for p- and n-type CZ silicon wafers.
Such results are promising results to introduce for black silicon RIE nano-structuring in solar cell process flow.
| Language: | English |
|---|---|
| Year: | 2017 |
| Proceedings: | 32nd European Photovoltaic Solar Energy Conference and Exhibition |
| Types: | Conference paper |
| ORCIDs: | Plakhotnyuk, Maksym , Davidsen, Rasmus Schmidt , Malureanu, Radu , Stamate, Eugen and Hansen, Ole |
