Journal article
Second-harmonic generation tuning by stretching arrays of GaAs nanowires
Swiss Federal Institute of Technology Zurich1
St. Petersburg National Research University of Information Technologies, Mechanics and Optics (ITMO)2
Nanophotonic Devices, Department of Electrical and Photonics Engineering, Technical University of Denmark3
NanoPhoton – Center for Nanophotonics, Centers, Technical University of Denmark4
Centre of Excellence for Silicon Photonics for Optical Communications, Centers, Technical University of Denmark5
Department of Electrical and Photonics Engineering, Technical University of Denmark6
We present a wearable device with III-V nanowires in a flexible polymer, which is used for active mechanical tuning of the second-harmonic generation intensity. An array of vertical GaAs nanowires was grown with metalorganic vapour-phase epitaxy, then embedded in polydimethylsiloxane and detached from the rigid substrate with mechanical peel off.
Experimental results show a tunability of the second-harmonic generation intensity by a factor of two for 30% stretching which matches the simulations including the distribution of sizes. We studied the impact of different parameters on the band dispersion and tunability of the second-harmonic generation, such as the pitch, the length, and the diameter.
We predict at least three orders of magnitude active mechanical tuning of the nonlinear signal intensity for nanowire arrays. The flexibility of the array together with the resonant wavelength engineering make such structures perspective platforms for future bendable or stretchable nanophotonic devices as light sources or sensors.
Language: | English |
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Publisher: | The Royal Society of Chemistry |
Year: | 2022 |
Pages: | 8858-8864 |
ISSN: | 20403372 and 20403364 |
Types: | Journal article |
DOI: | 10.1039/d2nr00641c |
ORCIDs: | 0000-0001-8568-8462 , 0000-0003-0922-8768 , 0000-0003-4531-5762 , Semenova, Elizaveta , 0000-0001-8155-9778 , 0000-0001-7469-9756 and 0000-0001-7192-8322 |