Journal article
Growth morphology and structure of bismuth thin films on GaSb(110)
Photoelectron spectroscopy, low-energy electron diffraction, scanning tunneling microscopy and surface X-ray diffraction were used to investigate the growth of thin layers of bismuth on GaSb(110). At submonolayer coverages, growth of two-dimensional islands occurs. A uniform (1 x I)-reconstruction is formed at a coverage of one monolayer.
A structural model derived from X-ray diffraction data is presented for this phase. The (1 x I)-phase consists of zigzag chains of bismuth atoms bonded alternately to the surface cations and anions of the bulk-terminated unrelaxed (110) surface. We propose that the (1 x 1)-phases formed by antimony and bismuth adsorbates on (110) surfaces of other III-V compound semiconductors are also described by the epitaxial continued layer model. (C) 1998 Elsevier Science B.V.
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Language: | English |
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Year: | 1998 |
Pages: | 254-260 |
ISSN: | 18792758 and 00396028 |
Types: | Journal article |
DOI: | 10.1016/S0039-6028(98)00516-0 |