Journal article
Monolithic integration of InP on Si by molten alloy driven selective area epitaxial growth
Nanophotonic Devices, Department of Photonics Engineering, Technical University of Denmark1
Quantum Physics and Information Technology, Department of Physics, Technical University of Denmark2
Department of Photonics Engineering, Technical University of Denmark3
St. Petersburg National Research University of Information Technologies, Mechanics and Optics (ITMO)4
National Centre for Nano Fabrication and Characterization, Technical University of Denmark5
Nanocharacterization, National Centre for Nano Fabrication and Characterization, Technical University of Denmark6
Electron matter interaction, Nanocharacterization, National Centre for Nano Fabrication and Characterization, Technical University of Denmark7
NanoPhoton – Center for Nanophotonics, Centers, Technical University of Denmark8
National Research University Higher School of Economics9
Department of Physics, Technical University of Denmark10
...and 0 moreWe report a new approach for monolithic integration of III-V materials into silicon, based on selective area growth and driven by a molten alloy in metal-organic vapor epitaxy. Our method includes elements of both selective area and droplet-mediated growths and combines the advantages of the two techniques.
Using this approach, we obtain organized arrays of high crystalline quality InP insertions into (100) oriented Si substrates. Our detailed structural, morphological and optical studies reveal the conditions leading to defect formation. These conditions are then eliminated to optimize the process for obtaining dislocation-free InP nanostructures grown directly on Si and buried below the top surface.
The PL signal from these structures exhibits a narrow peak at the InP bandgap energy. The fundamental aspects of the growth are studied by modeling the InP nucleation process. The model is fitted by our x-ray diffraction measurements and correlates well with the results of our transmission electron microscopy and optical investigations.
Our method constitutes a new approach for the monolithic integration of active III-V material into Si platform and opens up new opportunities in active Si photonics.
Language: | English |
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Year: | 2020 |
Pages: | 23780-23788 |
ISSN: | 20403372 and 20403364 |
Types: | Journal article |
DOI: | 10.1039/D0NR05779G |
ORCIDs: | Kadkhodazadeh, Shima , Radko, Ilya , Huck, Alexander , Yvind, Kresten , Semenova, Elizaveta , 0000-0002-1630-1559 and 0000-0002-4945-9803 |