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title:(Gallium AND Nitride AND Transistors AND in AND Extreme AND Temperatures)

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Advanced
1 PhD Thesis

Gallium Nitride Transistors in Extreme Temperatures

Duraij, Martijn Sebastiaan

Technical University of Denmark — 2022

these temperatures must be kept minimal to extend expected life time as far as possible. Wide-Bandgap (WBG) have shown operational capability at 200 ◦C and higher. Where the majority of published research work on Silicon Carbide (SiC) for high temperature in high power converter, topics on Gallium Nitride (GaN

Year: 2022

Language: English

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2 Journal article

Gallium-Nitride Field Effect Transistors in Extreme Temperature Conditions

Compact power electronic circuits and higher operating temperatures of switching devices call for an analysis and verification on the impact of the parasitic components in these devices. The found drift mechanisms in a gallium-nitride field effect transistors (GaN-FET) are studied by literature

Year: 2021

Language: English

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