Conference paper
InAs/InGaAsP Quantum Dots Emitting at 1.5 μm for Applications in Lasers
In
2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials Compound Semiconductor Week (csw/iprm)
—
2011
Abstract
In this work the epitaxial growth of InAs quantum dots (QDs) in an InGaAsP matrix on an InP wafer is described. A new approach to shift the emission wavelength to the 1.5μm region using deposition of a thin GaAs capping layer on top of the QDs is suggested and exploited. Laser structures based on 5 layers of such dots as the gain material demonstrate lasing in continuous wave regime at 1.5 μm wavelength at room temperature.
| Language: | English |
|---|---|
| Publisher: | IEEE |
| Year: | 2011 |
| Proceedings: | 23rd International Conference on Indium Phosphide and Related Materials |
| ISBN: | 1457717530 and 9781457717536 |
| Types: | Conference paper |
| ORCIDs: | Semenova, Elizaveta , Kadkhodazadeh, Shima and Yvind, Kresten |
