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10 items by relevance
1 Journal article

Micro-uniformity during laser anneal : metrology and physics

Vandervorst, W.; Rosseel, E.; Lin, R.; Petersen, D. H.; Clarysse, T.; Goossens, J.; et al. (2 more)

Mrs Online Proceedings Library — 2007, Volume 1070, Issue 1

Maintaining or improving device performance while scaling semiconductor devices, necessitates the development of extremely shallow (< 20 nm) source/drain extensions with a very high dopant concentration and electrical activation level. Whereas solutions based on RTA with cocktail implants have been proposed in previous generations, sub-45 nm technologies will require even shallower junctions which motivates the research effort on milli-second anneal approaches as these hold the promise of minimal diffusion coupled with high activation levels [1]. Laser annealing is one of these concepts ...

Year: 2007

Language: English

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2 Conference paper

Micro-uniformity during laser anneal : metrology and physics

Vandervorst, W.; Rosseel, E.; Lin, Rong; Petersen, Dirch Hjorth; Clarysse, T.; Goossens, J.; et al. (1 more)

Proceedings of Materials Research Society — 2008

Year: 2008

Language: English

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