Conference paper
Carrier dynamics and gain spectra at room-temperature in epitaxial ZNO thin films
Carrier dynamics of epitaxial ZnO thin film was investigated using a frequency up-conversion tehcnique. At lower carrier densities, the decay time of free exciton recombination was measured to be 24 ps. Rapid decay times of a few picoseconds were observed at higher carrier densities, which show a transition of two dynamic processes.
The comparison of calculated gain spectrum and experimental data gave evidence that the transition is form exciton-exciton scattering to the recombination of electron hole plasma.
Language: | English |
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Publisher: | World Scientific |
Year: | 1999 |
Proceedings: | 24th International Conference on The Physics of Semiconductors |
Types: | Conference paper |
ORCIDs: | Hvam, Jørn Märcher |