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Conference paper

E-band stacked InP DHBT power amplifier with broadband impedance transforming combiner

In Proceedings of European Microwave Conference in Central Europe — 2019, pp. 6-9

By Johansen, T. K.1,2,3; Squartecchia, M.1,2; Midili, V.2,4; Dupuy, J. Y.5; Nodjiadjim, V.5; Riet, M.5; Konczykowska, A.5

Edited by Vrba, David; Vrba, Jan; Svanda, Milan; Fiser, Ondrej

From

Center for Magnetic Resonance, Department of Electrical Engineering, Technical University of Denmark1

Department of Electrical Engineering, Technical University of Denmark2

Electromagnetic Systems, Department of Electrical Engineering, Technical University of Denmark3

Technical University of Denmark4

Commissariat à l’énergie atomique et aux énergies alternatives5

This paper reports on an E-band stacked power amplifier implemented in a power optimized InP DHBT microwave monolithic integrated circuit (MMIC) technology. A broadband impedance transforming four-way combiner is proposed to allow simultaneous operation over the E-band frequency ranges of 71-76 GHz and 81-86 GHz.

The power amplifier exhibits a maximum saturated output power of 22 dBm at 74 GHz with a linear power gain of 16.6 dB. The output power remains larger than 20 dBm from 71-76 GHz and larger than 19 dBm from 81-86 GHz.

Language: English
Publisher: IEEE
Year: 2019
Pages: 6-9
Proceedings: 2019 European Microwave Conference in Central Europe
ISBN: 1728112400 , 2874870676 , 9781728112404 and 9782874870675
Types: Conference paper
ORCIDs: Johansen, T. K. , Squartecchia, M. and Midili, V.
Keywords

Double heterojunction bipolar transistor (DHBT) Indium phosphide Power amplifiers Stacking

Other keywords

Broadband amplifiers DH-HEMTs III-V semiconductor materials Impedance Power generation double heterojunction bipolar transistor (DHBT) indium phosphide power amplifiers stacking.

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