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Conference paper

Power Amplifier Design for E-band Wireless System Communications

In 38th European Microwave Conference, 2008. Eumc 2008 — 2008, pp. 1378-1381

By Hadziabdic, Dzenan1,2; Krozer, Viktor1,2; Johansen, Tom Keinicke1,2

From

Electromagnetic Systems, Department of Electrical Engineering, Technical University of Denmark1

Department of Electrical Engineering, Technical University of Denmark2

E-band wireless communications will become important as the microwave backhaul for high-speed data transmission. One of the most critical components is the front-end power amplifier in this system. The paper analyzes different technologies with potential in the E-band frequency range and present a power amplifier design satisfying the E-band system specifications.

The designed power amplifier achieves a maximum output power of ges 20 dBm with a state-of-the-art power-added efficiency of 15%. The power is realized using InP DHBT technology. To the best of our knowledge it is the highest output power and efficiency reported for an InP HBT power amplifier in this frequency range.

The predicted power-added efficiency is higher than that of power amplifiers based on SiGe HBT and GaAs pHEMT technologies. The design shows the capabilities of InP DHBT for power amplifier applications as an alternative to HEMT based technologies in the millimeter-wave frequency range.

Language: English
Publisher: IEEE
Year: 2008
Pages: 1378-1381
Proceedings: 38th European Microwave Conference
ISBN: 2874870064 and 9782874870064
Types: Conference paper
DOI: 10.1109/EUMC.2008.4751721
ORCIDs: Johansen, Tom Keinicke
Keywords

DH-HEMTs Data communication Frequency Heterojunction bipolar transistors High power amplifiers Indium phosphide Microwave communication Power amplifiers Power generation Wireless communication

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