Journal article
High molecular weight block copolymer lithography for nanofabrication of hard mask and photonic nanostructures
An unusual dot pattern was realized via self-assembly of high molecular weight polystyrene-block-polydimethylsiloxane (PS-b-PDMS) copolymer by a simple one-step solvent annealing process, optimized based on Hansen solubility parameters. Annealing PS-b-PDMS under neutral solvent vapors at room temperature produces an ordered arrangement of dots with ∼112 nm spacing and ∼54 nm diameter.
The template is highly resistant to dry etching with chlorine-based plasma, enabling its utilization on a variety of hard masks and substrates. The self-assembled PDMS dots were further exploited as a template for direct patterning of silicon, metal, and dielectric materials. This nanopatterning methodology circumvents expensive and time-consuming atomic layer deposition, wet processes, and sequential infiltration techniques.
Application-wise, we show a process to fabricate nanostructured antireflection surfaces (nanocones) on a 2 in. silicon wafer, reducing the reflectance of planar silicon from 35% to below 0.5% over a broad wavelength range. Alternatively, nanocones made of TiO2 on silicon exhibit low reflectance (
Language: | English |
---|---|
Year: | 2019 |
Pages: | 420-429 |
ISSN: | 10957103 and 00219797 |
Types: | Journal article |
DOI: | 10.1016/j.jcis.2018.09.040 |
ORCIDs: | 0000-0002-8158-0240 and Ndoni, Sokol |
Antireflection coating Gallium nitride Hard mask High molecular weight PDMS-rich PS-b-PDMS Solar cells TiO2