Query: journal:(Microelectronic Engineering) title:(Selective etching of III-V nanowires for molecular junctions.), Author: Kallesøe, ISSN: 01679317

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journal:(Microelectronic Engineering) title:(Selective etching of III-V nanowires for molecular junctions.) ISSN: 01679317 Author: Kallesøe

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journal:(Microelectronic AND Engineering) AND title:(Selective AND etching AND of AND III-V AND nanowires AND for AND molecular AND junctions.)

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10 items by relevance

1 Journal article

Selective etching of III–V nanowires for molecular junctions 10.1016/j.mee.2007.12.023

Kallesøe, Christian; Mølhave, Kristian; Mårtensson, Thomas; Hansen, Torben Mikael; Samuelson, Lars; Bøggild, Peter

Microelectronic Engineering — 2008, Volume 85, Issue 5-6, pp. 1179-1181

Selective etching of heterostructure III–V nanowires can be used to form tips and narrow gaps simultaneously on multiple nanowires on a single wafer. In this study we tested bromine based etching of gallium arsenide segments in gallium phosphide nanowires. Depending on the etchant and etching

Year: 2008

Language: English

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2 Conference paper

Selective etching of III-V nanowires for molecular junctions

Kallesøe, Christian; Mølhave, Kristian; Martensson, T.; Hansen, Torben Mikael; Samuelson, Lars; Bøggild, Peter

Microelectronic Engineering — 2008, pp. 1179-118

Year: 2008

Language: English

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