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Journal article

Switching characteristics of an InP photonic crystal nanocavity: Experiment and theory

From

Department of Photonics Engineering, Technical University of Denmark1

Quantum and Laser Photonics, Department of Photonics Engineering, Technical University of Denmark2

Nanophotonic Devices, Department of Photonics Engineering, Technical University of Denmark3

Ultra-fast Optical Communication, Department of Photonics Engineering, Technical University of Denmark4

Thales5

The dynamical properties of an InP photonic crystal nanocavity are experimentally investigated using pump-probe techniques and compared to simulations based on coupled-mode theory. Excellent agreement between experimental results and simulations is obtained when employing a rate equation model containing three time constants, that we interpret as the effects of fast carrier diffusion from an initially localized carrier distribution and the slower effects of surface recombination and bulk recombination.

The variation of the time constants with parameters characterizing the nanocavity structure is investigated. The model is further extended to evaluate the importance of the fast and slow carrier relaxation processes in relation to patterning effects in the device, as exemplified by the case of all-optical wavelength conversion.

Language: English
Year: 2013
Pages: 31047-31061
ISSN: 10944087
Types: Journal article
DOI: 10.1364/OE.21.031047
ORCIDs: Yu, Yi , Heuck, Mikkel , Kristensen, Philip Trøst , Oxenløwe, Leif Katsuo , Yvind, Kresten and Mørk, Jesper

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