Conference paper
Quantifying non-uniform InP-on-Si wafer expansion with a sub-50 nm precision using E-beam metrology
Department of Photonics Engineering, Technical University of Denmark1
Nanophotonic Devices, Department of Photonics Engineering, Technical University of Denmark2
Quantum and Laser Photonics, Department of Photonics Engineering, Technical University of Denmark3
Ultra-fast Optical Communication, Department of Photonics Engineering, Technical University of Denmark4
The non-uniform expansion of InP layers bonded directly and with the adhesive-BCB to 2” silicon substrates is quantified and compared on a 2” wafer-scale by using E-beam as metrology tool with a sub-50 nm precision.
Language: | English |
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Year: | 2019 |
Proceedings: | 44th International Conference on Micro and NanoEngineering |
Types: | Conference paper |
ORCIDs: | Sakanas, Aurimas , Yu, Yi , Semenova, Elizaveta , Ottaviano, Luisa , Sahoo, Hitesh Kumar and Mørk, Jesper |