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Journal article

Topology Optimization of Stressed Capacitive RF MEMS Switches

From

Stanford University1

Department of Mechanical Engineering, Technical University of Denmark2

Solid Mechanics, Department of Mechanical Engineering, Technical University of Denmark3

University of California at San Diego4

Geometry design can improve a capacitive radio-frequency microelectromechanical system switch's reliability by reducing the impacts of intrinsic biaxial stresses and stress gradients on the switch's membrane. Intrinsic biaxial stresses cause stress stiffening, whereas stress gradients cause out-of-plane curling.

We use topology optimization to systematically generate designs, by minimizing stress stiffening, minimizing curling, or minimizing stress stiffening while constraining the curling behavior. We present the corresponding problem formulations and sensitivity derivations and discuss the role of key elements in the problem formulation.

Language: English
Publisher: IEEE
Year: 2013
Pages: 206-215
ISSN: 19410158 and 10577157
Types: Journal article
DOI: 10.1109/JMEMS.2012.2224640
ORCIDs: Sigmund, Ole

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