Journal article
TO-phonon anisotropies in a highly doped InP (001) grating structure
Universidad Autonoma de San Luis Potosi1
Department of Photonics Engineering, Technical University of Denmark2
Nanophotonic Devices, Department of Photonics Engineering, Technical University of Denmark3
Centre of Excellence for Silicon Photonics for Optical Communications, Centers, Technical University of Denmark4
Metamaterials, Department of Photonics Engineering, Technical University of Denmark5
For zinc blende semiconductors, such as InP, the Raman selection rules for a backscattering configuration from the (001) surface forbid the transversal optical (TO) phonon mode, whereas the longitudinal optical mode is allowed. However, when InP is highly doped with Si atoms, InP-Si clusters with the reduced C3v symmetry allow TO modes in the Raman spectrum with the backscattering configuration.
Here, we demonstrate that the amplitude of the TO modes can be modulated spatially by using a highly doped InP grating. By exciting the sample with a laser linearly polarized parallel and perpendicular to the grating grooves, we observe a change in amplitude of the phonon optical response for the TO mode.
| Language: | English |
|---|---|
| Publisher: | AIP Publishing LLC |
| Year: | 2021 |
| Pages: | 141102 |
| ISSN: | 10773118 and 00036951 |
| Types: | Journal article |
| DOI: | 10.1063/5.0062251 |
| ORCIDs: | 0000-0002-9335-2552 , 0000-0003-1368-829X , 0000-0003-1324-172X , 0000-0003-3378-5329 , Semenova, Elizaveta and Lavrinenko, Andrei V. |
