Journal article
Characteristics of InAs/GaNAs strain-compensated quantum dot solar cell
The University of Tokyo, Research Center for Advanced Science and Technology (RCAST), , 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan1
The University of Tokyo, School of Engineering, , 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan2
We have fabricated and compared the performance of GaAs-based p-i-n quantum dot solar cells with ten multilayer stacked structures of self-assembled InAs quantum dots embedded with GaNxAs1−x strain-compensating spacer layers. Reducing the thickness of the spacer layer, and hence increasing the nitrogen composition in GaNxAs1−x, from 40 nm (x=0.5%) to 15 nm (x=1.5%) thereby fulfilling the net strain-balanced condition, resulted in a steady increase in the short-circuit density, while a decreasing trend for the open-circuit voltage was observed.
The observed results can be interpreted in terms of the difference in the quantum confinement structure.
| Language: | Undetermined |
|---|---|
| Publisher: | American Institute of Physics |
| Year: | 2009 |
| Pages: | 024306 |
| ISSN: | 10897550 and 00218979 |
| Types: | Journal article |
| DOI: | 10.1063/1.3176903 |
