Preprint article · Journal article
Highly ordered graphene for two dimensional electronics
The Georgia Institute of Technology , Atlanta, Georgia 30332-0430
CNRS-LEPES , BP166, 38042 Grenoble Cedex, France
University of Missouri-Columbia Department of Physics and Astronomy, , Columbia, Missouri 65211
With expanding interest in graphene-based electronics, it is crucial that high quality graphene films be grown. Sublimation of Si from the 4H-SiC(0001) (Si-terminated) surface in ultrahigh vacuum is a demonstrated method to produce epitaxial graphene sheets on a semiconductor. In this letter the authors show that graphene grown from the SiC(0001¯) (C-terminated) surface are of higher quality than those previously grown on SiC(0001).
Graphene grown on the C face can have structural domain sizes more than three times larger than those grown on the Si face while at the same time reducing SiC substrate disorder from sublimation by an order of magnitude.
Language: | Undetermined |
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Publisher: | American Institute of Physics |
Year: | 2006 |
ISSN: | 10773118 and 00036951 |
Types: | Preprint article and Journal article |
DOI: | 10.1063/1.2358299 |