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Journal article

AlGaInAsPSb-based high-speed short-cavity VCSEL with single-mode emission at 1.3μm grown by MOVPE on InP substrate

By Grasse, Christian; Mueller, Michael1; Gruendl, Tobias1; Boehm, Gerhard1; Roenneberg, Enno2; Wiecha, Peter1; Rosskopf, Juergen2; Ortsiefer, Markus2; Meyer, Ralf1; Amann, Markus-Christian1

From

Walter Schottky Institut, Technische Universitaet Muenchen, 85748 Garching, Germany1

Vertilas GmbH, c/o Gate Garching, 85748 Garching, Germany2

In this paper we present the first InP-based short-cavity Vertical-Cavity Surface-Emitting Laser with an AlGaInAsP/GaInAsP active region and a re-grown and structured GaAs0.51Sb:C/Ga0.47InAs:Si buried tunnel junction (BTJ), which serves as current aperture, grown by LP-MOVPE. We achieved over 1mW single-mode continuous-wave (cw) emission at around 1.3μm wavelength and room-temperature.

The small-signal modulation bandwidth exceeds 7.5GHz, which is appropriate for 10Gb/s data transmission, and the series resistance is as low as 24Ω. The latter value indicates around three times lower dissipated power consumption than comparable MOVPE grown InP-based VCSELs.

Language: English
Year: 2013
Pages: 217-220
ISSN: 18735002 and 00220248
Types: Journal article
DOI: 10.1016/j.jcrysgro.2012.06.051
Keywords

A3. Metalorganic vapor phase epitaxy B1. Antimonides B1. Phosphides B2. Semiconducting III–V materials B3. Laser diodes

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