Journal article
Luminescent Coupling in GaAs/GaInNAsSb Multijunction Solar Cells
Multijunction subcell short-circuit currents are typically calculated by integrating the product of the external quantum efficiency and the input solar irradiance. The actual subcell current can be much greater than the result of this calculation when luminescence from a high bandgap subcell couples into a lower bandgap subcell.
A model is developed, based on detailed balance, which quantifies luminescent coupling current under different spectral conditions. Steady-state laser and pulsed flash measurements on GaAs/GaInNAsSb dual-junction solar cells demonstrate a luminescent coupling factor of ~35%, compared with the theoretical maximum value of ~48%.
The deviation from maximum is due to nonradiative current in the GaAs subcell.
| Language: | English |
|---|---|
| Publisher: | IEEE |
| Year: | 2013 |
| Pages: | 520-527 |
| ISSN: | 21563403 and 21563381 |
| Types: | Journal article |
| DOI: | 10.1109/JPHOTOV.2012.2213579 |
Computer architecture Couplings Current measurement Dark current Detailed balance GaAs-GaInNAsSb Gallium arsenide III-V semiconductors Photonics Photovoltaic cells band gap dilute nitride dual-junction solar cells energy gap gallium arsenide indium compounds luminescent coupling measurement by laser beam multijunction solar cells multijunction subcell short-circuit currents nonradiative current photoluminescence photon recycling pulsed flash measurements quantum efficiency semiconductor heterojunctions short-circuit currents solar cells solar irradiance spectral conditions steady-state laser measurements subcell current wide band gap semiconductors
