Query: journal:(ACS nano) title:(Bottom-up Growth of Epitaxial Graphene on 6H-SiC\(0001\)), Author: Huang, ISSN: 19360851 or 1936086X

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journal:(ACS nano) title:(Bottom-up Growth of Epitaxial Graphene on 6H-SiC\(0001\)) ISSN: 19360851 or 1936086X Author: Huang

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journal:(ACS AND nano) AND title:(Bottom-up AND Growth AND of AND Epitaxial AND Graphene AND on AND 6H-SiC\\(0001\\))

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1 Journal article

Bottom-up growth of epitaxial graphene on 6H-SiC(0001) 10.1021/nn800711v

Huang, Han; Chen, Wei; Chen, Shi; Wee, Andrew Thye Shen

Acs Nano — 2008, Volume 2, Issue 12, pp. 2513-2518

We use in situ low temperature scanning tunneling microscopy (STM) to investigate the growth mechanism of epitaxial graphene (EG) thermally grown on Si-terminated 6H-SiC(0001). Our detailed study of the transition from monolayer EG to trilayer EG reveals that EG adopts a bottom-up growth mechanism

Year: 2008

Language: English

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2 Journal article

Bottom-up Growth of Epitaxial Graphene on 6H-SiC(0001) 10.1021/nn800711v