Query: journal:(Nano letters) title:(Correlating Raman Spectral Signatures with Carrier Mobility in Epitaxial Graphene\: A Guide to Achieving High Mobility on the Wafer Scale), Author: Wetherington, ISSN: 15306984 or 15306992

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journal:(Nano letters) title:(Correlating Raman Spectral Signatures with Carrier Mobility in Epitaxial Graphene\: A Guide to Achieving High Mobility on the Wafer Scale) ISSN: 15306984 or 15306992 Author: Wetherington

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Author: Wetherington remove ISSN: 15306984 or 15306992 remove

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journal:(Nano AND letters) AND title:(Correlating AND Raman AND Spectral AND Signatures AND with AND Carrier AND Mobility AND in AND Epitaxial AND Graphene\: AND A AND Guide AND to AND Achieving AND High AND Mobility AND on AND the AND Wafer AND Scale)

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1 Preprint article · Journal article

Correlating Raman spectral signatures with carrier mobility in epitaxial graphene: a guide to achieving high mobility on the wafer scale 10.1021/nl901073g

Robinson, Joshua A; Wetherington, Maxwell; Tedesco, Joseph L; Campbell, Paul M; Weng, Xiaojun; Stitt, Joseph; et al. (8 more)

Nano Letters — 2009, Volume 9, Issue 8, pp. 2873-2876

We report a direct correlation between carrier mobility and Raman topography of epitaxial graphene (EG) grown on silicon carbide (SiC). We show the Hall mobility of material on SiC(0001) is highly dependent on thickness and monolayer strain uniformity. Additionally, we achieve high mobility

Year: 2009

Language: English

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jbhoali pfck engdm

2 Journal article

Correlating Raman Spectral Signatures with Carrier Mobility in Epitaxial Graphene: A Guide to Achieving High Mobility on the Wafer Scale 10.1021/nl901073g