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Journal article

Progress and Perspectives of Atomically Engineered Perovskite Oxide Interfaces for Electronics and Electrocatalysts

From

Functional Oxides, Department of Energy Conversion and Storage, Technical University of Denmark1

Department of Energy Conversion and Storage, Technical University of Denmark2

University of British Columbia3

The 2D electron gases (2DEGs) at the surfaces and interfaces of SrTiO3‐based homo‐ and heterostructures provide new opportunities for electronics and spintronics. Herein, the recent progresses in the creation of advanced material systems of conducting oxide interfaces with engineered electronic reconstructions and redox reactions, as well as their characterization by a nondestructive resonant X‐ray reflectivity technique, are summarized.

Moreover, the development of modulation‐doped high‐mobility oxide 2DEGs and the magnetic‐proximity‐induced spin‐polarized 2DEGs at oxide interfaces are also discussed. Finally, the perspectives on design of conducting oxide interfaces for a new generation of quantum devices and mixed electronic and ionic conducting electrocatalysts are addressed.

Atomically engineered oxide interfaces will represent a unique family of quantum materials for future information and energy technologies.

Language: English
Year: 2019
Pages: 1900547
ISSN: 21967350
Types: Journal article
DOI: 10.1002/admi.201900547
ORCIDs: Chen, Yunzhong

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