Journal article · Preprint article
Gate-tunable Rashba spin-orbit coupling and spin polarization at diluted oxide interfaces
A diluted oxide interface of LaAl1−xMnxO/SrTiO3 (LAMO/STO) provides a new way of tuning the ground states of the interface between the two band insulators of LAO and STO from metallic/superconducting to highly insulating. Increasing the Mn doping level (x) leads to a delicate control of the carrier density as well as a raise in the electron mobility and spin polarization.
Herein, we demonstrate a tunable Rashba spin-orbit coupling (SOC) and spin polarization of LAMO/STO (0.2≤x≤0.3) by applying a back gate. The presence of SOC causes splitting of the energy band into two branches by a spin splitting energy. The maximum spin splitting energy depends on the Mn doping and decreases with the increasing Mn content and then vanishes at x=0.3.
The carrier density dependence of the spin splitting energy for different compositions shows a dome-shaped behavior with a maximum at different normalized carrier densities. These findings have not yet been observed in LAO/STO interfaces. A fully back-gate-tunable spin-polarized two-dimensional electron liquid is observed at the interface with x=0.3 where only dxy orbits are populated (5.3×1012cm−2≤ns≤1.0×1013cm−2).
The present results shed light on unexplored territory in SOC at STO-based oxide heterostructures and make LAMO/STO an intriguing platform for spin-related phenomena in 3d electron systems.
Language: | English |
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Year: | 2019 |
ISSN: | 1550235x and 10980121 |
Types: | Journal article and Preprint article |
DOI: | 10.1103/PhysRevB.100.125134 |
ORCIDs: | Gan, Yulin , Christensen, Dennis Valbjørn , Pryds, Nini and Chen, Yunzhong |