Journal article
Crossover of angular dependent magnetoresistance with the metal-insulator transition in colossal magnetoresistive manganite films
Thermo Ceramics, Fuel Cells and Solid State Chemistry Division, Risø National Laboratory for Sustainable Energy, Technical University of Denmark1
Fuel Cells and Solid State Chemistry Division, Risø National Laboratory for Sustainable Energy, Technical University of Denmark2
Risø National Laboratory for Sustainable Energy, Technical University of Denmark3
Chinese Academy of Sciences4
The temperature and magnetic field dependence of angular dependent magnetoresistance (AMR) along two orthogonal directions ([100] and [01]) was investigated in a charge-orbital-ordered Sm0.5Ca0.5MnO3 (SCMO) film grown on (011)-oriented SrTiO3 substrates. A dramatic decrease of AMR magnitude in both directions was observed with the appearance of magnetic-field-induced metal-insulator transition, which further led to a sign crossover in the AMR effect.
The AMR crossover may give a direct evidence of the drastic modification of electronic structure or possible orbital reconstruction with the magnetic-destruction of charge/orbital ordering in SCMO films. ©2009 American Institute of Physics
| Language: | English |
|---|---|
| Publisher: | American Institute of Physics |
| Year: | 2009 |
| ISSN: | 10773118 and 00036951 |
| Types: | Journal article |
| DOI: | 10.1063/1.3240407 |
| ORCIDs: | Chen, Yunzhong and Pryds, Nini |
