Journal article
Nature of bonding forces between two hydrogen-passivated silicon wafers
The nature and strength of the bonding forces between two II-passivated Si surfaces are studied with the density-functional theory, using an approach based on recent theoretical advances in understanding of van der Waals forces between two surfaces. Contrary to previous suggestions of van der Waals attraction between H overlayers, we find that the attraction is mainly due to long-range van der Waals interactions between the Si substrates, while the equilibrium separation is determined by short-range repulsion between occupied Si-H orbitals.
Estimated bonding energies and Si-H frequency shifts are in qualitative agreement with experiment. [S0163-1829(98)06448-0].
Language: | English |
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Year: | 1998 |
Pages: | 16118-16122 |
ISSN: | 10953795 , 01631829 and 1550235x |
Types: | Journal article |
DOI: | 10.1103/PhysRevB.58.16118 |