Journal article
Unit Cell Structure of Crystal Polytypes in InAs and InSb Nanowires
Institute of Semiconductor and Solid State Physics1
Institut für Festkörpertheorie und -optik2
Solid State Physics3
Polymer & Materials Chemistry4
Center for Electron Nanoscopy5
IEMN, UMR6
NEST, Istituto Nanoscienze-CNR and7
The atomic distances in hexagonal polytypes of III−V compound semiconductors differ from the values expected from simply a change of the stacking sequence of (111) lattice planes. While these changes were difficult to quantify so far, we accurately determine the lattice parameters of zinc blende, wurtzite, and 4H polytypes for InAs and InSb nanowires, using X-ray diffraction and transmission electron microscopy.
The results are compared to density functional theory calculations. Experiment and theory show that the occurrence of hexagonal bilayers tends to stretch the distances of atomic layers parallel to the c axis and to reduce the in-plane distances compared to those in zinc blende. The change of the lattice parameters scales linearly with the hexagonality of the polytype, defined as the fraction of bilayers with hexagonal character within one unit cell.
Language: | English |
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Publisher: | American Chemical Society |
Year: | 2011 |
Pages: | 1483-1489 |
ISSN: | 15306992 and 15306984 |
Types: | Journal article |
DOI: | 10.1021/nl1041512 |