Journal article
A 4 Gb/s 2-level to 2 Gsymbol/s 4-level converter GaAs IC for semiconductor optical amplifier QPSK modulators
The design of a 50 Ω impedance matched two-to-four level converter GaAs IC for two-electrode semiconductor optical amplifier (SOA) modulators is presented. The designed IC exhibits eye diagrams with eye openings of better than 0.30 V and a spacing between adjacent output signal levels of 0.33 V for output symbol rates of up to 2 Gsymbol/s corresponding to input bit rates of up to 4 Gb/s.
A novel differential super buffer output driver is applied, for which output reflection coefficients |S22| of less than -12 dB for frequencies up to 10 GHz are obtained. A 1 Gb/s optical QPSK microwave link transmission experiment using a packaged sample of the designed IC and a two-electrode semiconductor optical amplifier phase modulator has been conducted
Language: | English |
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Publisher: | IEEE |
Year: | 1994 |
Pages: | 1277-1281 |
ISSN: | 1558173x and 00189200 |
Types: | Journal article |
DOI: | 10.1109/4.315207 |
1 Gbit/s Bit rate GaAs GaAs converter IC Gallium arsenide III-V semiconductors Impedance Optical buffering Optical design Optical modulation Optical reflection Photonic integrated circuits QPSK modulators Semiconductor optical amplifiers Signal design adjacent output signal levels code convertors differential super buffer output driver eye diagrams eye openings field effect integrated circuits gallium arsenide microwave links optical QPSK microwave link transmission optical fibres optical links optical modulation output reflection coefficients output symbol rates phase modulator phase shift keying semiconductor lasers semiconductor optical amplifier