Journal article
Fabrication and improvement of nanopillar InGaN/GaN light-emitting diodes using nanosphere lithography
Department of Photonics Engineering, Technical University of Denmark1
Diode Lasers and LED Systems, Department of Photonics Engineering, Technical University of Denmark2
Chinese Academy of Sciences3
Department of Micro- and Nanotechnology, Technical University of Denmark4
Nanoprobes, Department of Micro- and Nanotechnology, Technical University of Denmark5
Lund University6
Surface-patterning technologies have enabled the improvement of currently existinglight-emitting diodes (LEDs) and can be used to overcome the issue of low quantum efficiency ofgreen GaN-based LEDs. We have applied nanosphere lithography to fabricate nanopillars onInGaN∕GaN quantum-well LEDs. By etching through the active region, it is possible to improveboth the light extraction efficiency and, in addition, the internal quantum efficiency through theeffects of lattice strain relaxation.
Nanopillars of different sizes are fabricated and analyzed usingRaman spectroscopy. We have shown that nanopillar LEDs can be significantly improved byapplying a combination of ion-damage curing techniques, including thermal and acidic treatment,and have analyzed their effects using x-ray photoelectron spectroscopy.
| Language: | English |
|---|---|
| Publisher: | Society of Photo-Optical Instrumentation Engineers |
| Year: | 2015 |
| Pages: | 093062-093062 |
| ISSN: | 19342608 |
| Types: | Journal article |
| DOI: | 10.1117/1.JNP.9.093062 |
| ORCIDs: | Fadil, Ahmed , Ou, Yiyu , Wu, Kaiyu , Lu, Weifang , Petersen, Paul Michael and Ou, Haiyan |
damage treatment gallium nitride light-emitting diodes nanopillar
