Journal article
Resonance Energy Transfer in Hybrid Devices in the Presence of a Surface
Department of Photonics Engineering, Technical University of Denmark1
Programmable Phase Optics, Department of Photonics Engineering, Technical University of Denmark2
Department of Physics, Technical University of Denmark3
Quantum Physics and Information Technology, Department of Physics, Technical University of Denmark4
Center for Electron Nanoscopy, Technical University of Denmark5
Nanophotonic Devices, Department of Photonics Engineering, Technical University of Denmark6
We have studied room-temperature, nonradiative resonant energy transfer from InGaN/GaN quantum wells to CdSe/ZnS nanocrystals separated by aluminum oxide layers of different thicknesses. Nonradiative energy transfer from the quantum wells to the nanocrystals at separation distances of up to approximately 10 nm was observed.
By comparing the carrier dynamics of the quantum wells and the nanocrystals, we found that nonradiative recombination via surface states, generated during dry etching of the wafer, counteracts the nonradiative energy-transfer process to the nanocrystals and therefore decreases the process efficiency.
Language: | English |
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Year: | 2014 |
Pages: | 16284-16289 |
ISSN: | 19327455 and 19327447 |
Types: | Journal article |
DOI: | 10.1021/jp5049327 |
ORCIDs: | Huck, Alexander , Kadkhodazadeh, Shima and Yvind, Kresten |