About

Log in?

DTU users get better search results including licensed content and discounts on order fees.

Anyone can log in and get personalized features such as favorites, tags and feeds.

Log in as DTU user Log in as non-DTU user No thanks

DTU Findit
Boolean: (bicycle AND helmet) OR (head AND protection) (always group AND in parenthesis)
Title: title:(climate change)
Author: author:("bohr niels" OR "bohr n") (avoid only full first name)
Phrase: "water pump control" (does not work with wildcards)
Wildcards: wom?n pharm*

More help on how to search

Flexible matching

About search syntax

Search syntax Advanced
Close advanced
{{problem}}
By field Using AND/OR By author
This tool can help you build boolean queries suitable for doing a broad search for different synonyms or spellings of each word. Start via the drop-down below or just start typing in the search field.
{{ row.typeTitle }}: ( )

Since our index often lack the full first name of people it can be difficult to correctly search by author.

Fill in the fields and let us help you build a good query:

If you need to find everything possible, consider only searching by last name.

Use "Starting year" to ignore publications out of year range.

More...

Journal article

InP-DHBT-on-BiCMOS technology with fT/fmax of 400/350 GHz for heterogeneous integrated millimeter-wave sources

By Kraemer, Tomas1; Ostermay, Ina1; Jensen, Thomas1; Johansen, Tom Keinicke2,3; Schmueckle, Franz-Josef1; Thies, Andreas1; Krozer, Viktor1; Heinrich, Wolfgang1; Krueger, Olaf1; Traenkle, Günther1; Lisker, Marco4; Trusch, Andreas4; Kulse, Philip4; Tillack, Bernd4 ...and 4 more

From

Ferdinand-Braun-Institut1

Department of Electrical Engineering, Technical University of Denmark2

Electromagnetic Systems, Department of Electrical Engineering, Technical University of Denmark3

Leibniz-Institut für innovative Mikroelektronik4

This paper presents a novel InP-SiGe BiCMOS technology using wafer-scale heterogeneous integration. The vertical stacking of the InP double heterojunction bipolar transistor (DHBT) circuitry directly on top of the BiCMOS wafer enables ultra-broadband interconnects with <0.2 dB insertion loss from 0-100 GHz.

The 0.8 × 5 μm2 InP DHBTs show fT/fmax of 400/350 GHz with an output power of more than 26 mW at 96 GHz. These are record values for a heterogeneously integrated transistor on silicon. As a circuit example, a 164-GHz signal source is presented. It features a voltage-controlled oscillator in BiCMOS, which drives a doubler-amplifier chain in InP DHBT technology.

Language: English
Publisher: IEEE
Year: 2013
Pages: 2209-2216
ISSN: 15579646 and 00189383
Types: Journal article
DOI: 10.1109/TED.2013.2264141
ORCIDs: Johansen, Tom Keinicke
Keywords

BiCMOS integrated circuits Double heterojunction bipolar transistors (DHBT) Integrated circuit design Millimeter wave circuits Voltage-controlled oscillators (VCOs)

Other keywords

double heterojunction bipolar transistors (DHBT) integrated circuit interconnections millimeter wave circuits voltage-controlled oscillators

DTU users get better search results including licensed content and discounts on order fees.

Log in as DTU user

Access

Analysis