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Journal article · Conference paper

Systematic study of shallow junction formation on germanium substrates

By Hellings, Geert; Rosseel, Erik1; Clarysse, Trudo1; Petersen, Dirch Hjorth2,3,4; Hansen, Ole4; Nielsen, Peter Folmer5; Simoen, Eddy1; Eneman, Geert; De Jaeger, Brice1; Hoffmann, Thomas1; De Meyer, Kristin; Vandervorst, Wilfried ...and 2 more

From

Interuniversitair Micro-Elektronica Centrum1

Nanointegration Group, NanoSystemsEngineering Section, Department of Micro- and Nanotechnology, Technical University of Denmark2

NanoSystemsEngineering Section, Department of Micro- and Nanotechnology, Technical University of Denmark3

Department of Micro- and Nanotechnology, Technical University of Denmark4

Technical University of Denmark5

Published results on Ge junctions are benchmarked systematically using RS–XJ plots. The electrical activation level required to meet the ITRS targets is calculated. Additionally, new results are presented on shallow furnace-annealed B junctions and shallow laser-annealed As junctions. Co-implanting B junctions with F is shown to degrade junction properties.

Language: English
Year: 2011
Pages: 347-350
Proceedings: Post-Si-CMOS electronic devices: the role of Ge and III-V materials
ISSN: 18735568 and 01679317
Types: Journal article and Conference paper
DOI: 10.1016/j.mee.2010.11.014
ORCIDs: Petersen, Dirch Hjorth and Hansen, Ole
Keywords

Arsenic Boron Germanium Mobility Sheet Resistance Ultra Shallow Junction

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