Journal article
Donor-acceptor-pair emission characterization in N-B doped fluorescent SiC
Nanophotonic Devices, Department of Photonics Engineering, Technical University of Denmark1
Department of Photonics Engineering, Technical University of Denmark2
Linköping University3
Meijo University4
Energy and Materials, Department of Chemistry, Technical University of Denmark5
Department of Chemistry, Technical University of Denmark6
KTH Royal Institute of Technology7
In the present work, we investigated donor-acceptor-pair emission in N-B doped fluorescent 6H-SiC, by means of photoluminescence, Raman spectroscopy, and angle-resolved photoluminescence. The photoluminescence results were interpreted by using a band diagram with Fermi-Dirac statistics. It is shown that with N and B concentrations in a range of 1018 cm−3 the samples exhibit the most intense luminescence when the concentration difference (n-type) is about 4.6x1018 cm−3.
Raman spectroscopy studies further verified the doping type and concentrations for the samples. Furthermore, strong luminescence intensity in a large emission angle range was achieved from angle-resolved photoluminescence. The results indicate N-B doped fluorescent SiC as a good wavelength converter in white LEDs applications.
| Language: | English |
|---|---|
| Year: | 2011 |
| Pages: | 1439-1446 |
| ISSN: | 21593930 |
| Types: | Journal article |
| DOI: | 10.1364/OME.1.001439 |
| ORCIDs: | Ou, Yiyu , Berg, Rolf W. and Ou, Haiyan |
